A through-silicon-via to active device noise coupling study for CMOS SOI technology

Publikationstyp
Conference Paper
Date Issued
2011-06-20
Sprache
English
Author(s)
Duan, Xiaomin  
Gu, Xiaoxiong  
Cho, Jonghyun  
Kim, Joungho  
Institut
Theoretische Elektrotechnik E-18  
TORE-URI
http://hdl.handle.net/11420/14871
Start Page
1791
End Page
1795
Article Number
5898756
Citation
Proceedings - 2011 IEEE 61st Electronic Components and Technology Conference. - Piscataway, NJ, 2011. - Art.-Nr. 5898756 1791-1795 (2011)
Contribution to Conference
61st Electronic Components and Technology Conference, ECTC 2011  
Publisher DOI
10.1109/ECTC.2011.5898756
Scopus ID
2-s2.0-79960425453
Publisher
IEEE
High speed signals on TSVs can interact with the active device area through a lossy substrate, causing circuit malfunctioning and signal integrity problems. In this paper, we examine noise coupling mechanism between TSVs and active devices with an emphasis on the CMOS SOI Technology. Both a full-wave electromagnetic solver and a 3D transmission line matrix method are applied and compared in the study. Extensive parametric simulations are performed in order to understand the tradeoffs among different design parameters. Equivalent circuit models are extracted and used in time domain analysis to assess the impact of the noise coupling on active circuit performance. The results demonstrate superior noise isolation for SOI substrates compared to bulk silicon due to the buried oxide layer capacitance.
DDC Class
600: Technik
620: Ingenieurwissenschaften