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Impact of process variability on FinFET 6T SRAM cells for physical unclonable functions (PUFs)
Publikationstyp
Conference Paper
Date Issued
2017-12
Sprache
English
TORE-URI
Start Page
31
End Page
36
Citation
International Conference on Computer Engineering and Systems, ICCES: 31-36 (2017-12)
Contribution to Conference
Publisher DOI
Publisher
IEEE
The behavior of 6T SRAM cells in presence of process variability for physical unclonable functions (PUFs) is analyzed on the 16 nm FinFET technology. Both systematic and random threshold voltage variations are considered in this analysis. Randomness prosperity of the secret keys generated from the SRAM cell is tested. Supply voltage ramp-up impact on the cells start-up values is also analyzed at different mismatch amounts.
Subjects
FinFET
Hardware Security
Physical Unclonable Functions (PUFs)
SRAM
Variability
DDC Class
600: Technik