Bottom gate organic field effect transistors made by laser structuring

This paper presents a process to manufacture all-polymer field effect transistors in a bottom gate configuration where all electrodes - including the gate electrode - are patterned using an excimer laser in combination with a scanning unit. This technique yields channel lengths of 10 μm between the source and the drain electrodes. Being a combination of a scanning and a single shot patterning process it is a promising candidate for an industrial process with a resolution of 10 μm and an operational throughput of at least 6 cm2/s.

Subjects

Bottom gate

Laser patterning

P3HT

Thin-film transistors

DDC Class

621.3: Electrical Engineering, Electronic Engineering

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Bottom gate organic field effect transistors made by laser structuring