TXRF calibration samples fabricated by atomic layer deposition (ALD) and photolithography

Publikationstyp
Conference Paper
Publikationsdatum
2021-11
Sprache
English
Author
Schulz, Norbert 
Zolotaryov, A. 
Trieu, Hoc Khiem 
Institut
Mikrosystemtechnik E-7 
TORE-URI
http://hdl.handle.net/11420/11833
Start Page
340
End Page
342
Citation
Mikroelektronik, Mikrosystemtechnik und ihre Anwendungen - Innovative Produkte fur zukunftsfähige Markte - MikroSystemTechnik Congress (2021)
Contribution to Conference
Mikroelektronik, Mikrosystemtechnik und ihre Anwendungen - Innovative Produkte für zukunftsfähige Markte - MikroSystemTechnik Congress 2021 
Scopus ID
2-s2.0-85125188761
In this contribution, an innovative fabrication process for metallic trace element reference samples is introduced. These can be used to calibrate and maintain tools for the detection of those metallic trace elements like the total reflection x-ray fluorescence (TXRF) method which are used in semiconductor and microsystem fabrication facilities. The fabrication process is based on the complete covering of silicon wafers with atomic layer deposition (ALD) and structuring of this layer using photolithography. ALD is the deposition process of choice, since the self limiting behavior is well suited to cover the whole wafer with an minimal amount of material. Samples with metal amounts as low as 1010 atoms per cm2 could be achieved with that process.