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Electromagnetic modeling and optimization of through silicon vias
Citation Link: https://doi.org/10.15480/882.1713
Publikationstyp
Doctoral Thesis
Date Issued
2018
Sprache
English
Author(s)
Advisor
Title Granting Institution
Technische Universität Hamburg-Harburg
Place of Title Granting Institution
Hamburg
Examination Date
2017-12-13
Institut
TORE-DOI
Publisher
Shaker
This thesis presents the simulation and the design of vertical interconnects in silicon substrates known as through silicon vias (TSVs) which are applied as a component of 3D integration of integrated circuits. Numerical methods of comparably high efficiency are developed and applied in order to simulate the electromagnetic properties of large realistic arrays of TSVs. The proposed methods are correlated with alternative methods and parameter variations are carried out to derive design guidelines. Further, several test structures with TSVs are developed and the measurement results are correlated with the results from electromagnetic simulations.
Subjects
silicon
integrated circuit
electromagnetic fields
electromagnetic modeling
contour integral method
interconnect modeling
DDC Class
620: Ingenieurwissenschaften
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Dahl_Dissertation_2017.pdf
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