|Publisher DOI:||10.1109/ICECS.2018.8617984||Title:||Compact Transformerless K-Band PA with more than 33% PAE and 14.8 dBm Output Power in 65 nm Bulk CMOS||Language:||English||Authors:||Vehring, Sönke
|Issue Date:||17-Jan-2019||Source:||2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018: 25-28 (2019-01-17)||Journal or Series Name:||2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018||Conference:||25th IEEE International Conference on Electronics Circuits and Systems||Abstract (english):||This paper presents a compact transformerless balanced power amplifier. The amplifier uses high-Q inductors and capacitors as matching elements instead of lossy transformers. Consequently, higher PAE and output power can be obtained than comparable state-of-the-art. For verification of the design approach a K-band power amplifier in 65 nm bulk CMOS with 33.8% PAE and 14.8 dBm output power is demonstrated. The chip draws 71.8 mA from a 1.2 V supply with 0 dBm input power and has a size of 0.24 mm 2 including all pads. © 2018 IEEE.||URI:||http://hdl.handle.net/11420/2192||ISBN:||978-153869562-3||Institute:||Hochfrequenztechnik E-3||Type:||InProceedings (Aufsatz / Paper einer Konferenz etc.)|
|Appears in Collections:||Publications without fulltext|
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