Publisher DOI: 10.1109/ICECS.2018.8617984
Title: Compact Transformerless K-Band PA with more than 33% PAE and 14.8 dBm Output Power in 65 nm Bulk CMOS
Language: English
Authors: Vehring, Sönke 
Böck, Georg 
Issue Date: 17-Jan-2019
Source: 2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018: 25-28 (2019-01-17)
Journal or Series Name: 2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018 
Conference: 25th IEEE International Conference on Electronics Circuits and Systems 
Abstract (english): This paper presents a compact transformerless balanced power amplifier. The amplifier uses high-Q inductors and capacitors as matching elements instead of lossy transformers. Consequently, higher PAE and output power can be obtained than comparable state-of-the-art. For verification of the design approach a K-band power amplifier in 65 nm bulk CMOS with 33.8% PAE and 14.8 dBm output power is demonstrated. The chip draws 71.8 mA from a 1.2 V supply with 0 dBm input power and has a size of 0.24 mm 2 including all pads. © 2018 IEEE.
URI: http://hdl.handle.net/11420/2192
ISBN: 978-153869562-3
Institute: Hochfrequenztechnik E-3 
Type: InProceedings (Aufsatz / Paper einer Konferenz etc.)
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