DC FieldValueLanguage
dc.contributor.authorRanjan, Rajeev-
dc.contributor.authorHansen, Mirko-
dc.contributor.authorMendoza Ponce, Pablo Daniel-
dc.contributor.authorAbu Saleh, Lait-
dc.contributor.authorSchröder, Dietmar-
dc.contributor.authorZiegler, Martin-
dc.contributor.authorKohlstedt, Hermann-
dc.contributor.authorKrautschneider, Wolfgang-
dc.date.accessioned2019-05-24T09:50:33Z-
dc.date.available2019-05-24T09:50:33Z-
dc.date.issued2018-04-26-
dc.identifier.citationIEEE International Symposium on Circuits and Systems: 8350996, 1-5 (2018-04-26)de_DE
dc.identifier.isbn978-1-5386-4881-0de_DE
dc.identifier.isbn978-1-5386-4882-7de_DE
dc.identifier.urihttp://hdl.handle.net/11420/2699-
dc.description.abstractThis paper details the design of an integrate fire (I F) neuron ASIC and its integration with a double barrier memristor device. The memristor has a non-volatile analog memory characteristic which changes with time and voltage. The neuron ASIC is designed to interact with the memristor by integrating its current and firing when a certain threshold is reached. The resulting spikes increase the memristor's conductance and consequently the firing rate of neuron increases. Together, the ASIC and the memristor mimics neuromorphic learning on hardware. The ASIC has been fabricated in AMS 350nm process.en
dc.language.isoende_DE
dc.publisherIEEEde_DE
dc.titleIntegration of Double Barrier Memristor Die with Neuron ASIC for Neuromorphic Hardware Learningde_DE
dc.typeinProceedingsde_DE
dc.type.dinicontributionToPeriodical-
dcterms.DCMITypeText-
tuhh.abstract.englishThis paper details the design of an integrate fire (I F) neuron ASIC and its integration with a double barrier memristor device. The memristor has a non-volatile analog memory characteristic which changes with time and voltage. The neuron ASIC is designed to interact with the memristor by integrating its current and firing when a certain threshold is reached. The resulting spikes increase the memristor's conductance and consequently the firing rate of neuron increases. Together, the ASIC and the memristor mimics neuromorphic learning on hardware. The ASIC has been fabricated in AMS 350nm process.de_DE
tuhh.publisher.doi10.1109/ISCAS.2018.8350996-
tuhh.publication.instituteIntegrierte Schaltungen E-9de_DE
tuhh.type.opusInProceedings (Aufsatz / Paper einer Konferenz etc.)-
tuhh.institute.germanIntegrierte Schaltungen E-9de
tuhh.institute.englishIntegrierte Schaltungen E-9de_DE
tuhh.gvk.hasppnfalse-
dc.type.drivercontributionToPeriodical-
dc.type.casraiConference Paper-
tuhh.container.startpage1de_DE
tuhh.container.endpage5de_DE
dc.relation.conferenceIEEE International Symposium on Circuits and Systems, ISCAS 2018de_DE
dc.identifier.scopus2-s2.0-85057108078de_DE
tuhh.container.articlenumber8350996de_DE
local.funding.infoGerman Research Foundation (DFG) for funding the research group FOR2093 (Memristive Components for Neural Systems), Project C2 (Neural Circuits)de_DE
datacite.resourceTypeConference Paper-
datacite.resourceTypeGeneralConferencePaper-
item.openairetypeinProceedings-
item.mappedtypeinProceedings-
item.openairecristypehttp://purl.org/coar/resource_type/c_5794-
item.cerifentitytypePublications-
item.creatorOrcidRanjan, Rajeev-
item.creatorOrcidHansen, Mirko-
item.creatorOrcidMendoza Ponce, Pablo Daniel-
item.creatorOrcidAbu Saleh, Lait-
item.creatorOrcidSchröder, Dietmar-
item.creatorOrcidZiegler, Martin-
item.creatorOrcidKohlstedt, Hermann-
item.creatorOrcidKrautschneider, Wolfgang-
item.grantfulltextnone-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.creatorGNDRanjan, Rajeev-
item.creatorGNDHansen, Mirko-
item.creatorGNDMendoza Ponce, Pablo Daniel-
item.creatorGNDAbu Saleh, Lait-
item.creatorGNDSchröder, Dietmar-
item.creatorGNDZiegler, Martin-
item.creatorGNDKohlstedt, Hermann-
item.creatorGNDKrautschneider, Wolfgang-
crisitem.author.deptIntegrierte Schaltungen E-9-
crisitem.author.deptIntegrierte Schaltungen E-9-
crisitem.author.deptIntegrierte Schaltungen E-9-
crisitem.author.deptIntegrierte Schaltungen E-9-
crisitem.author.deptIntegrierte Schaltungen E-9-
crisitem.author.orcid0000-0003-1048-577X-
crisitem.author.orcid0000-0001-5891-3628-
crisitem.author.orcid0000-0001-8629-4545-
crisitem.author.parentorgStudiendekanat Elektrotechnik, Informatik und Mathematik (E)-
crisitem.author.parentorgStudiendekanat Elektrotechnik, Informatik und Mathematik (E)-
crisitem.author.parentorgStudiendekanat Elektrotechnik, Informatik und Mathematik (E)-
crisitem.author.parentorgStudiendekanat Elektrotechnik, Informatik und Mathematik (E)-
crisitem.author.parentorgStudiendekanat Elektrotechnik, Informatik und Mathematik (E)-
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