Publisher DOI: 10.1002/admi.201700912
Title: Low-Temperature Mullite Formation in Ternary Oxide Coatings Deposited by ALD for High-Temperature Applications
Language: English
Authors: Furlan, Kaline P.  
Krekeler, Tobias 
Ritter, Martin  
Blick, Robert 
Schneider, Gerold A. 
Nielsch, Kornelius 
Zierold, Robert 
Janßen, Rolf 
Issue Date: 8-Dec-2017
Source: Advanced Materials Interfaces 23 (4): 1700912 (2017-12-08)
Abstract (english): 
Atomic layer deposition (ALD) process presents thickness control in an Ångstrom scale due to its inherent surface self-limited reactions. In this work, an ALD super cycle approach, where a superposition of nanolaminates of SiO2 and Al2O3 is generated by cycling the precursors APTES–H2O–O3 and TMA–H2O, is used to deposit thin films with varying ratio of Al2O3:SiO2 into silicon wafers and into inverse photonic crystals. The resulting ternary oxide films deposited at low temperature (150 °C) are amorphous. However, conversion to mullite occurs at 1000 °C, way below the conversion temperatures found into powder processing or diphasic sol–gel routes (type II) and comparable to monophasic sol–gel synthesis. By means of such a mullite coating, the structural stability of an Al2O3 inverse photonic crystal is increased up to 1400 °C.
ISSN: 2196-7350
Journal: Advanced materials interfaces 
Institute: Keramische Hochleistungswerkstoffe M-9 
Document Type: Article
Project: SFB 986: Teilprojekt C5 - Oxidische Hochtemperatur-Schutzschichtsysteme mittels angepasster Porenstruktur 
SFB 986: Zentralprojekt Z3 - Elektronenmikroskopie an multiskaligen Materialsystemen 
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