TUHH Open Research
Help
  • Log In
    New user? Click here to register.Have you forgotten your password?
  • English
  • Deutsch
  • Communities & Collections
  • Publications
  • Research Data
  • People
  • Institutions
  • Projects
  • Statistics
  1. Home
  2. TUHH
  3. Publication References
  4. Substrate-Integrated-Waveguide E-Plane 3-dB Power-Divider/Combiner Based on Resistive Layers
 
Options

Substrate-Integrated-Waveguide E-Plane 3-dB Power-Divider/Combiner Based on Resistive Layers

Publikationstyp
Journal Article
Date Issued
2017-05
Sprache
English
Author(s)
Pasian, Marco  
Silvestri, Lorenzo  
Rave, Christian  
Bozzi, Maurizio  
Perregrini, Luca  
Jacob, Arne  
Samanta, Kamal K.  
Institut
Hochfrequenztechnik E-3  
TORE-URI
http://hdl.handle.net/11420/3891
Journal
IEEE transactions on microwave theory and techniques / Symposium issue  
Volume
65
Issue
5
Start Page
1498
End Page
1510
Article Number
7829379
Citation
IEEE Transactions on Microwave Theory and Techniques 5 (65): 7829379 (2017-05)
Publisher DOI
10.1109/TMTT.2016.2642938
Scopus ID
2-s2.0-85010676712
Several different microwave circuits, including beamforming networks and balanced amplifiers, make use of 3-dB power dividers and combiners. A well-known architecture able to work over large bandwidths, a critical request for many applications, is based on E-plane three-port waveguide structures, where a lossy element is added to overcome the inherently poor isolation given by lossless three-port junctions. While a standard implementation based on normal rectangular waveguides often results in large and heavy structures, an implementation based on substrate-integrated-waveguide (SIW) technology offers advantages in terms of compactness, weight reduction, cost minimization, and integration possibilities with active stages. This paper presents the design, fabrication, and characterization of two SIW E-plane 3-dB power divider/combiners where the lossy element is realized using a resistive layer. The prototypes cover the entire X-band from 8 to 12 GHz, and the resistive layers are realized according to two different manufacturing techniques to investigate the potentials of both approaches. The optimization of the resistive layer geometry and resistivity, a critical aspect for low-profile SIW circuits, is discussed in detail. In particular, an analytical formula is derived, which allows to determine the optimum values for the resistive layers' principal parameters, namely the length and resistivity, without the use of full-wave numerical solvers.
Subjects
Card
E-plane circuit
paste
power combiner
power divider
resistive septum
substrate integrated waveguide (SIW)
thick-film resistor
wideband
TUHH
Weiterführende Links
  • Contact
  • Send Feedback
  • Cookie settings
  • Privacy policy
  • Impress
DSpace Software

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science
Design by effective webwork GmbH

  • Deutsche NationalbibliothekDeutsche Nationalbibliothek
  • ORCiD Member OrganizationORCiD Member Organization
  • DataCiteDataCite
  • Re3DataRe3Data
  • OpenDOAROpenDOAR
  • OpenAireOpenAire
  • BASE Bielefeld Academic Search EngineBASE Bielefeld Academic Search Engine
Feedback