Please use this identifier to cite or link to this item: https://doi.org/10.15480/882.2522
DC FieldValueLanguage
dc.contributor.authorSolan, Enver-
dc.contributor.authorDirkmann, Sven-
dc.contributor.authorHansen, Mirko-
dc.contributor.authorSchröder, Dietmar-
dc.contributor.authorKohlstedt, Hermann-
dc.contributor.authorZiegler, Martin-
dc.contributor.authorMussenbrock, Thomas-
dc.contributor.authorOchs, Karlheinz-
dc.date.accessioned2019-12-02T12:33:07Z-
dc.date.available2019-12-02T12:33:07Z-
dc.date.issued2017-04-13-
dc.identifier.citationJournal of Physics D: Applied Physics 19 (50): 195102 (2017-04-13)de_DE
dc.identifier.issn1361-6463de_DE
dc.identifier.urihttp://hdl.handle.net/11420/3921-
dc.description.sponsorshipThe financial support by the German Research Foundation (Deutsche Forschungsgemeinschaft—DFG) through FOR 2093 is gratefully acknowledged.de_DE
dc.language.isoende_DE
dc.publisherIOP Publ.de_DE
dc.relation.ispartofJournal of physicsde_DE
dc.subjectelectrical modelingde_DE
dc.subjectmemristive devicesde_DE
dc.subjectmemristorde_DE
dc.subjectnanoelectronicsde_DE
dc.subjectneuromorphic circuitsde_DE
dc.subjectresistive switchingde_DE
dc.subject.ddc600: Technikde_DE
dc.titleAn enhanced lumped element electrical model of a double barrier memristive devicede_DE
dc.typeArticlede_DE
dc.identifier.doi10.15480/882.2522-
dc.type.diniarticle-
dcterms.DCMITypeText-
tuhh.identifier.urnurn:nbn:de:gbv:830-882.056486-
tuhh.oai.showtruede_DE
tuhh.abstract.englishThe massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems - nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.de_DE
tuhh.publisher.doi10.1088/1361-6463/aa69ae-
tuhh.publication.instituteIntegrierte Schaltungen E-9de_DE
tuhh.identifier.doi10.15480/882.2522-
tuhh.type.opus(wissenschaftlicher) Artikel-
dc.type.driverarticle-
dc.rights.cchttps://creativecommons.org/licenses/by/3.0/de_DE
dc.type.casraiJournal Article-
tuhh.container.issue19de_DE
tuhh.container.volume50de_DE
dc.rights.nationallicensefalsede_DE
tuhh.container.articlenumber195102de_DE
local.status.inpressfalsede_DE
item.creatorOrcidSolan, Enver-
item.creatorOrcidDirkmann, Sven-
item.creatorOrcidHansen, Mirko-
item.creatorOrcidSchröder, Dietmar-
item.creatorOrcidKohlstedt, Hermann-
item.creatorOrcidZiegler, Martin-
item.creatorOrcidMussenbrock, Thomas-
item.creatorOrcidOchs, Karlheinz-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.fulltextWith Fulltext-
item.openairetypeArticle-
item.creatorGNDSolan, Enver-
item.creatorGNDDirkmann, Sven-
item.creatorGNDHansen, Mirko-
item.creatorGNDSchröder, Dietmar-
item.creatorGNDKohlstedt, Hermann-
item.creatorGNDZiegler, Martin-
item.creatorGNDMussenbrock, Thomas-
item.creatorGNDOchs, Karlheinz-
item.grantfulltextopen-
item.languageiso639-1en-
item.cerifentitytypePublications-
crisitem.author.deptIntegrierte Schaltungen E-9-
crisitem.author.orcid0000-0001-6445-4990-
crisitem.author.orcid0000-0002-1484-6125-
crisitem.author.parentorgStudiendekanat Elektrotechnik, Informatik und Mathematik-
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