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  4. Interface characterization of metal-gate MOS-structures and the application to DRAM-capacitors
 
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Interface characterization of metal-gate MOS-structures and the application to DRAM-capacitors

Citation Link: https://doi.org/10.15480/882.3
Publikationstyp
Doctoral Thesis
Date Issued
2002
Sprache
English
Author(s)
Sell, Bernhard  
Advisor
Krautschneider, Wolfgang  
Title Granting Institution
Technische Universität Hamburg
Place of Title Granting Institution
Hamburg
Examination Date
2002-06-17
Institut
Nano- und Medizinelektronik E-9  
TORE-DOI
10.15480/882.3
TORE-URI
http://tubdok.tub.tuhh.de/handle/11420/5
The main result of this study is the development of a full analysis procedure for metal-gate MOS-structures that allows to identify problems during processing and to extract physical parameters of metal electrodes. With knowledge gained from this analysis a polysilicon/TiN-stack has been developed and successfully integrated as low-resistance electrode into state-of-the-art deep trench DRAM-capacitors. These electrodes will be required to fabricate sub-100 nm deep trench DRAMs.
Subjects
MOS-structure
DRAM
Lizenz
http://rightsstatements.org/vocab/InC/1.0/
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