|Publisher DOI:||10.1109/TCPMT.2015.2497466||Title:||A rigorous approach for the modeling of through-silicon-via pairs using multipole expansions||Language:||English||Authors:||Duan, Xiaomin
Ndip, Ivan N.
|Keywords:||Cylindrical wave function;multipole expansion method (MEM);through-silicon-via (TSV).||Issue Date:||25-Nov-2015||Publisher:||IEEE||Source:||IEEE Transactions on Components, Packaging and Manufacturing Technology 1 (6): 7337412, 117-125 (2016-01-01)||Journal or Series Name:||IEEE transactions on components, packaging and manufacturing technology||Abstract (english):||This paper presents a novel multipole expansion method for the rigorous analysis of wave propagation along a through-silicon-via (TSV) pair. TSV models are often constructed using equivalent circuits under the assumption that the interfaces between different media are equipotential. In comparison with that, the proposed method is a rigorous full-wave solution of the propagation mode. It takes advantage of cylindrical wave expansion functions and matches the boundary conditions at both the metal-to-insulator and insulator-to-silicon interfaces exactly. The method is validated against a full-wave finite-element method solver, and analysis examples using the method are demonstrated in a frequency range up to 100 GHz.||URI:||http://hdl.handle.net/11420/5250||ISSN:||2156-3950||Institute:||Theoretische Elektrotechnik E-18||Type:||(wissenschaftlicher) Artikel|
|Appears in Collections:||Publications without fulltext|
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