A rigorous approach for the modeling of through-silicon-via pairs using multipole expansions

Journal
IEEE transactions on components, packaging and manufacturing technology  
Volume
6
Issue
1
Start Page
117
End Page
125
Article Number
7337412
Citation
IEEE Transactions on Components, Packaging and Manufacturing Technology 1 (6): 7337412, 117-125 (2016-01-01)
Publisher DOI
10.1109/TCPMT.2015.2497466
Scopus ID
2-s2.0-84949818464
Publisher
IEEE
This paper presents a novel multipole expansion method for the rigorous analysis of wave propagation along a through-silicon-via (TSV) pair. TSV models are often constructed using equivalent circuits under the assumption that the interfaces between different media are equipotential. In comparison with that, the proposed method is a rigorous full-wave solution of the propagation mode. It takes advantage of cylindrical wave expansion functions and matches the boundary conditions at both the metal-to-insulator and insulator-to-silicon interfaces exactly. The method is validated against a full-wave finite-element method solver, and analysis examples using the method are demonstrated in a frequency range up to 100 GHz.
Subjects
Cylindrical wave function
multipole expansion method (MEM)
through-silicon-via (TSV).
DDC Class
600: Technik