Impact of process variability on FinFET 6T SRAM cells for physical unclonable functions (PUFs)

Publikationstyp
Conference Paper
Publikationsdatum
2017-12
Sprache
English
Author
Faragalla, Mohamed 
Ewais, Mohammad A. 
Ragai, Hani 
Badran, Mahmoud S. 
Issa, Hanady Hussein 
TORE-URI
http://hdl.handle.net/11420/5278
Start Page
31
End Page
36
Citation
International Conference on Computer Engineering and Systems, ICCES: 31-36 (2017-12)
Contribution to Conference
12th International Conference on Computer Engineering and Systems, ICCES 2017 
Publisher DOI
10.1109/ICCES.2017.8275272
Publisher
IEEE
The behavior of 6T SRAM cells in presence of process variability for physical unclonable functions (PUFs) is analyzed on the 16 nm FinFET technology. Both systematic and random threshold voltage variations are considered in this analysis. Randomness prosperity of the secret keys generated from the SRAM cell is tested. Supply voltage ramp-up impact on the cells start-up values is also analyzed at different mismatch amounts.
Schlagworte
FinFET
Hardware Security
Physical Unclonable Functions (PUFs)
SRAM
Variability
DDC Class
600: Technik