Please use this identifier to cite or link to this item: https://doi.org/10.15480/882.51
Fulltext available Open Access
Publisher DOI: 10.1007/11751540_72
Title: Electronic States in Three Dimensional Quantum Dot/Wetting Layer Structures
Language: German
Authors: Voß, Heinrich 
Betcke, Marta 
Keywords: quantum dot;electronic structure;electron states;computer simulation;nonlinear eigenproblem
Issue Date: Dec-2005
Source: Preprint. Published in ICCSA 2006: Computational Science and Its Applications - ICCSA 2006 pp 684-693
Part of Series: Preprints des Institutes für Mathematik 
Volume number: 95
Abstract (english): Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.
URI: http://tubdok.tub.tuhh.de/handle/11420/53
DOI: 10.15480/882.51
Institute: Mathematik E-10 
Type: Preprint (Vorabdruck)
License: In Copyright In Copyright
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