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Charakterisierung von MOS-Transistoren vor und nach Gateoxiddurchbruch
Citation Link: https://doi.org/10.15480/882.724
Other Titles
Characterization of MOS transistors before and after gate oxide breakdown
Publikationstyp
Doctoral Thesis
Date Issued
2004
Sprache
German
Author(s)
Advisor
Title Granting Institution
Technische Universität Hamburg
Place of Title Granting Institution
Hamburg
Examination Date
2004-01-16
Institut
TORE-DOI
Citation
Charakterisierung von MOS-Transistoren vor und nach Gateoxiddurchbruch / Alejandro Avellán Hampe. Düsseldorf : VDI-Verl., 2004. (Fortschritt-Berichte VDI : Reihe 9, Elektronik, Mikro- und Nanotechnik ; 371)
The continuous scaling of integrated circuits in the last decades has led to gate oxide thicknesses below 2nm in MOS transistors of state of the art technologies. Breakdown of such thin oxides becomes intrinsically more likely, and the 1 billion transistor chip is already within reach. Therefore, the probability of having at least one oxide breakdown within the projected circuit lifetime of 10 years seems quite high. In this work, the characteristics of MOS transistors before and after gate oxide breakdown are studied. Different categories of breakdown are identified and models for the dc characteristics as well as the noise (random telegraph signals) after breakdown are developed. The models are implemented to analyze the effect of breakdown on different analog and digital circuits. It is shown that, according to the application and breakdown type, circuits may be functional after breakdown of a transistor. With the presented approach it is possible to point out critical transistors in the circuit and analyze the impact of breakdown during the design stage.
Subjects
MOS
Transistor
Gateoxid
Charakterisierung
RTS
Rauschen
Breakdown
Durchbruch
Schaltung
Verstärker
MOS transistor
gate oxide breakdown
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