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Reliable GaN-based THz gunn diodes with side-contact and field-plate technologies
Citation Link: https://doi.org/10.15480/882.3630
Publikationstyp
Journal Article
Date Issued
2020-04-29
Sprache
English
Institut
TORE-DOI
TORE-URI
Journal
Volume
8
Start Page
84116
End Page
84122
Article Number
9081902
Citation
IEEE Access 8: 9081902, 84116-84122 (2020)
Publisher DOI
Scopus ID
Publisher
IEEE
For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and field-plate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65A and high current drop of approximately 100mA for a small ring diode width w of 1.5 μm with 600 nm effective diode height h at a small threshold voltage of 8.5V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.
Subjects
field-plate
Gallium nitride
gunn diodes
semiconductor structure
side-contact
terahertz source
DDC Class
600: Technik
Publication version
publishedVersion
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