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Publisher DOI: 10.1109/ACCESS.2020.2991309
Title: Reliable GaN-based THz gunn diodes with side-contact and field-plate technologies
Language: English
Authors: Hajo, Ahid S. 
Yilmazoglu, Oktay 
Dadgar, Armin 
Küppers, Franko 
Kusserow, Thomas 
Keywords: field-plate; Gallium nitride; gunn diodes; semiconductor structure; side-contact; terahertz source
Issue Date: 29-Apr-2020
Publisher: IEEE
Source: IEEE Access 8: 9081902, 84116-84122 (2020)
Abstract (english): 
For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and field-plate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65A and high current drop of approximately 100mA for a small ring diode width w of 1.5 μm with 600 nm effective diode height h at a small threshold voltage of 8.5V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.
DOI: 10.15480/882.3630
ISSN: 2169-3536
Journal: IEEE access 
Institute: Mikrosystemtechnik E-7 
Document Type: Article
License: CC BY 4.0 (Attribution) CC BY 4.0 (Attribution)
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