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https://doi.org/10.15480/882.3630
Publisher DOI: | 10.1109/ACCESS.2020.2991309 | Title: | Reliable GaN-based THz gunn diodes with side-contact and field-plate technologies | Language: | English | Authors: | Hajo, Ahid S. Yilmazoglu, Oktay Dadgar, Armin Küppers, Franko Kusserow, Thomas |
Keywords: | field-plate; Gallium nitride; gunn diodes; semiconductor structure; side-contact; terahertz source | Issue Date: | 29-Apr-2020 | Publisher: | IEEE | Source: | IEEE Access 8: 9081902, 84116-84122 (2020) | Abstract (english): | For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and field-plate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65A and high current drop of approximately 100mA for a small ring diode width w of 1.5 μm with 600 nm effective diode height h at a small threshold voltage of 8.5V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics. |
URI: | http://hdl.handle.net/11420/9678 | DOI: | 10.15480/882.3630 | ISSN: | 2169-3536 | Journal: | IEEE access | Institute: | Mikrosystemtechnik E-7 | Document Type: | Article | License: | ![]() |
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