|Publisher DOI:||10.1109/LMWC.2021.3062983||Title:||A V-Band Low-Power Compact LNA in 130-nm SiGe BiCMOS Technology||Language:||English||Authors:||Sutbas, Batuhan
Jalli Ng, Herman
|Keywords:||Integrated circuit;low-noise amplifier (LNA);low-power;Miller effect;mm-wave;silicon-germanium;wideband||Issue Date:||May-2021||Source:||IEEE Microwave and Wireless Components Letters 31 (5): 9366489 (2021-05)||Journal:||IEEE microwave and wireless components letters||Abstract (english):||
This letter presents the design of a V-band low-power compact low-noise amplifier (LNA) in a 130-nm SiGe BiCMOS technology. For the low-power and low-noise requirements, transistors need to operate with low-voltage supply and low current density, which comes at the cost of lower gain per BJT stage. We use a technique to cancel the Miller capacitance in a single-stage differential amplifier and achieve high-gain, low-power, and low-noise simultaneously. The circuit topology is analyzed, and the transistor core layout and the matching network design considerations are discussed. The measured circuit shows a peak gain of 14.1 dB in a 3-dB bandwidth from 44 to 67 GHz while consuming 5.1 mW. Experimental results show an output power of 7.1 dBm at 1-dB compression with an associated power-added efficiency of 30%. The simulated noise figure is 3.3 dB at the center frequency. To the best of the authors' knowledge, the highest figure of merit among V-band LNAs based on silicon is reported.
|URI:||http://hdl.handle.net/11420/9699||ISSN:||1531-1309||Institute:||Hochfrequenztechnik E-3||Document Type:||Article|
|Appears in Collections:||Publications without fulltext|
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