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Item type:Publication, Access status: without files , Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology(IEEE, 2018-03); ; ; ; Two power amplifier (PA) MMIC designs with more than 1W of output power in the 37.5-42.5 GHz Q-band downlink band are presented. The circuits are manufactured using the Fraunhofer IAF 100 nm AlGaN/GaN process. The first one is a two-stage design in microstrip line (MSL) technology, whereas the second one is a three-stage design in grounded coplanar waveguide (GCPW) technology, which enables effective output power combining and compact layout at Q-band. A maximum output power of 2.1 W (33.2 dBm) is measured at 39 GHz with a power-added efficiency (PAE) of 14.7%, corresponding to a power density of 1.45 W/mm.Publicationtype: Conference Paper260 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , A 5 W AlGaN/GaN power amplifier MMIC for 25-27 GHz downlink applications(IEEE, 2018-03); ; ; ; This work presents the design and analysis of a 5 W power amplifier (PA) MMIC operating between 25 and 27 GHz. The technology used is the 0.1 μm AlGaN/GaN HEMT process of Fraunhofer IAF. To benchmark its performance around 26 GHz two preliminary designs are synthesized and analyzed. The measured results demonstrate for the final MMIC up to 5.2 W of output power associated with 32 % of power added efficiency (PAE). A peak PAE of 35 % was observed in continuous-wave (CW) operation at a drain supply voltage of 15 V.Publicationtype: Conference Paper199