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Item type:Publication, Access status: without files , Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-BandThe paper investigates experimentally the effect of harmonic terminations on AlGaN/GaN power amplifiers (PA) performance at K-/Ka-band. Two technologies are compared, a 0.25 µm and 0.1 µm process. In both cases, a harmonic termination increases the achievable output power by about 10 % at the expense of bandwidth, whereas the efficiency is improved only in the first one.Publicationtype: Conference Paper84 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology(IEEE, 2018-03); ; ; ; Two power amplifier (PA) MMIC designs with more than 1W of output power in the 37.5-42.5 GHz Q-band downlink band are presented. The circuits are manufactured using the Fraunhofer IAF 100 nm AlGaN/GaN process. The first one is a two-stage design in microstrip line (MSL) technology, whereas the second one is a three-stage design in grounded coplanar waveguide (GCPW) technology, which enables effective output power combining and compact layout at Q-band. A maximum output power of 2.1 W (33.2 dBm) is measured at 39 GHz with a power-added efficiency (PAE) of 14.7%, corresponding to a power density of 1.45 W/mm.Publicationtype: Conference Paper260 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , A 5 W AlGaN/GaN power amplifier MMIC for 25-27 GHz downlink applications(IEEE, 2018-03); ; ; ; This work presents the design and analysis of a 5 W power amplifier (PA) MMIC operating between 25 and 27 GHz. The technology used is the 0.1 μm AlGaN/GaN HEMT process of Fraunhofer IAF. To benchmark its performance around 26 GHz two preliminary designs are synthesized and analyzed. The measured results demonstrate for the final MMIC up to 5.2 W of output power associated with 32 % of power added efficiency (PAE). A peak PAE of 35 % was observed in continuous-wave (CW) operation at a drain supply voltage of 15 V.Publicationtype: Conference Paper199 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , An efficient AlGaN/GaN HEMT power amplifier MMIC at K-BandThis paper presents an efficient power amplifier MMIC at K-Band (20 GHz) designed for a 0.25 μm AlGaN/GaN HEMT process on three-inch s.i.-SiC substrates. A low-loss network topology is used for second-harmonic output matching to achieve high PAE. The measured amplifier has a maximum PAE of 41% and an associated output power of 31.4dBm when operated at a drain voltage of 20V. At 35V drain voltage, the amplifier exhibits a PAE of 34% and an associated output power of 34 dBm.Publicationtype: Conference Paper38