Directional couplers from 30 to 140GHz in silicon

Publikationstyp
Conference Paper
Date Issued
2010-12
Sprache
English
Author(s)
Laemmle, Benjamin
Schmalz, Klaus
Scheytt, Christoph
Kölpin, Alexander
Weigel, Robert
TORE-URI
http://hdl.handle.net/11420/6812
Start Page
806
End Page
809
Article Number
5728463
Citation
Asia-Pacific Microwave Conference, APMC: 5728463 (2010-12)
Contribution to Conference
Asia-Pacific Microwave Conference, APMC 2010
Scopus ID
2-s2.0-79955712963
Web of Science ID
WOS:000394046200200
ISBN of container
978-490233922-2
In this paper directional couplers with reduced size, by lumped elements, inverted microstrip, and broadside coupled lines at 61, 110, and 122 GHz center frequency and up to 156-GHz bandwidth have been designed. The couplers show an isolation up to 40 dB. Different SiGe BiCMOS technologies with 250-nm and 130-nm feature width and 5 to 7 metal layers have been used. The measurement results have been compared to simulation results and good agreement has been observed.
Subjects
millimeter wave directional couplers
passive circuits