Publisher DOI: 10.23919/GEMIC.2018.8335016
Title: Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
Language: English
Authors: Feuerschütz, Philip 
Friesicke, Christian 
Lozar, Roger 
Wagner, Sandrine 
Maier, Thomas 
Brückner, Peter 
Quay, Rüdiger 
Jacob, Arne 
Issue Date: 10-Apr-2018
Source: GeMiC 2018 - 2018 German Microwave Conference (2018-January): 13-16 (2018-04-10)
Journal or Series Name: GeMiC 2018 - 2018 German Microwave Conference 
Abstract (english): Two power amplifier (PA) MMIC designs with more than 1W of output power in the 37.5-42.5 GHz Q-band downlink band are presented. The circuits are manufactured using the Fraunhofer IAF 100 nm AlGaN/GaN process. The first one is a two-stage design in microstrip line (MSL) technology, whereas the second one is a three-stage design in grounded coplanar waveguide (GCPW) technology, which enables effective output power combining and compact layout at Q-band. A maximum output power of 2.1 W (33.2 dBm) is measured at 39 GHz with a power-added efficiency (PAE) of 14.7%, corresponding to a power density of 1.45 W/mm.
URI: http://hdl.handle.net/11420/2455
ISBN: 978-398126688-7
Institute: Hochfrequenztechnik E-3 
Type: InProceedings (Aufsatz / Paper einer Konferenz etc.)
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