|Publisher DOI:||10.23919/GEMIC.2018.8335016||Title:||Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology||Language:||English||Authors:||Feuerschütz, Philip
|Issue Date:||10-Apr-2018||Publisher:||IEEE||Source:||GeMiC 2018 - 2018 German Microwave Conference (2018-January): 13-16 (2018-04-10)||Abstract (english):||Two power amplifier (PA) MMIC designs with more than 1W of output power in the 37.5-42.5 GHz Q-band downlink band are presented. The circuits are manufactured using the Fraunhofer IAF 100 nm AlGaN/GaN process. The first one is a two-stage design in microstrip line (MSL) technology, whereas the second one is a three-stage design in grounded coplanar waveguide (GCPW) technology, which enables effective output power combining and compact layout at Q-band. A maximum output power of 2.1 W (33.2 dBm) is measured at 39 GHz with a power-added efficiency (PAE) of 14.7%, corresponding to a power density of 1.45 W/mm.||Conference:||11th German Microwave Conference, GeMiC 2018||URI:||http://hdl.handle.net/11420/2455||ISBN:||978-3-9812668-8-7||Institute:||Hochfrequenztechnik E-3||Type:||InProceedings (Aufsatz / Paper einer Konferenz etc.)|
|Appears in Collections:||Publications without fulltext|
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