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Item type:Publication, Access status: without files , Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxidesIn this work, we focus our interest on the temperature dependence of soft breakdown conduction (SBD), mainly in the range in which real devices are commonly operated (-20°C<T<160°C). A thorough experimental study involving samples with different oxide thicknesses and substrate types is presented, and the results are interpreted in terms of an extended version of the quantum point contact model (QPC) for the non-zero temperature case. Even though several approaches attempting to explain the SBD I-V characteristics have been proposed, analytical modeling of its temperature dependence has always been restricted to a single bias condition. In contrast, we provide a simple parameterization of the experimental data which accounts for both I-V and I-T characteristics within a consistent framework based on the physics of mesoscopic conductors. The magnitude of the current flowing through the SBD spot essentially depends on the barrier height encountered by incoming electrons, while the shape of the I-V characteristics is dictated by the particular features of the spot and the potential drop distribution.Publicationtype: Conference Paper11