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Item type:Publication, Access status: without files , Gate insulators and interface effects in organic thin-film transistors(Elsevier, 2008-02); ; ; ; This paper presents a detailed characterization of different thermosetting polymers to be used as gate dielectrics in organic thin-film transistors. Selected materials yield smooth films with good insulation properties and offer attractive processing conditions. Bottom-gate transistors were prepared using these dielectrics and compared to hybrid transistors with surface-treated SiO2 as the dielectric. Gate bias induced leakage and solvent effects were investigated by preparing metal/insulator/semiconductor devices. Poly(3-hexylthiophene) (P3HT) transistors with organic dielectrics exhibited higher channel conductivity and lower mobility values with respect to P3HT-hybrid transistors and pentacene transistors. The importance of dielectric/semiconductor interface was discussed by comparing the performances of pentacene and P3HT transistors produced on different dielectrics.Publicationtype: Journal Article13 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Bottom gate organic field effect transistors made by laser structuring(Elsevier, 2006-12); ; This paper presents a process to manufacture all-polymer field effect transistors in a bottom gate configuration where all electrodes - including the gate electrode - are patterned using an excimer laser in combination with a scanning unit. This technique yields channel lengths of 10 μm between the source and the drain electrodes. Being a combination of a scanning and a single shot patterning process it is a promising candidate for an industrial process with a resolution of 10 μm and an operational throughput of at least 6 cm2/s.Publicationtype: Journal Article7