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Item type:Publication, Access status: without files , Fabrication and characterization of high power Gallium Nitride based terahertz Gunn diodes(2020-11-08); ; ; ; In this paper, we report the fabrication and characterization of a THz Gunn source based on Gallium Nitride (GaN) with side-contact and field-plate technologies. This source works stable at operating voltages up to 20 V due to good passivation layer and good heat sink to the GaN substrate. The GaN-based Gunn diode has relatively high forward current of 0.9 A and a high current drop of about 50 mA for higher frequency and output power.Publicationtype: Conference Paper37 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: with files , Reliable GaN-based THz gunn diodes with side-contact and field-plate technologies(IEEE, 2020-04-29); ; ; ; For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and field-plate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65A and high current drop of approximately 100mA for a small ring diode width w of 1.5 μm with 600 nm effective diode height h at a small threshold voltage of 8.5V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.Publicationtype: Journal ArticleScopus© Citations 21 129 220