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Item type:Publication, Access status: without files , Model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides(American Institute of Physics (AIP), 2005); ; ; The voltage and temperature dependence of the soft breakdown conduction mechanism in metal-oxide-semiconductor capacitors and transistors with ultrathin dielectric layers is investigated. A physical derivation of the quantum point contact model and its parameters is presented, which incorporates the smearing of the Fermi function at the electrodes as well as the effect of thermal vibrations of the constriction's bottleneck. The model also takes into account the boundary conditions at the two ends of the breakdown path by considering the semiconductor band bending occurring in the nondamaged surrounding device area. Good agreement between model and experimental curves is found. Because of its analytical nature, the proposed model can be implemented in circuit simulators. © 2005 American Institute of Physics.Publicationtype: Journal Article24 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides(Elsevier, 2004-04-01); ; ; The voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides in MOS structures was investigated. Measurements performed on p- and n-type substrate samples with different oxide thicknesses were compared, and the results analyzed within the framework of the quantum point contact model for dielectric breakdown. The model has been extended so as to include the thermal vibrations of the atoms that form the constriction's bottleneck. A new interpretation of the model parameters, in connection with the potential drops distribution, is discussed.Publicationtype: Journal Article6 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Temperature dependence of the hard breakdown current of MOS capacitors(Bolognia University, 2002); ; ; I-V curves as a function of temperature of broken down n- and p-type MOS capacitors with different oxide thicknesses are presented. In accumulation, a crossover of the temperature dependent curves is observed. At low voltages the hard breakdown current increases with temperature whereas it decreases with temperature for higher voltages. This behaviour can be straightforwardly linked to the available charge for conduction at the electrodes. MINIMOS simulations as well as theoretical considerations were performed that clearly support this idea.Publicationtype: Conference Paper12