31st European Solid-State Device Research Conference, ESSDERC 2001

Publications

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A trench DRAM gain cell for high signal charge at reduced cell area
(Frontiers Media S.A., 2001)
Krautschneider, Wolfgang
;
Hofmann, F.
A novel DRAM trench gain cell for high signal charge at a small cell area below 8F2 has been developed. The gain concept allows to decrease significantly the trench depth without sacrifying the cell performance. Demonstrators with full functionality and increased signal charge were processed and experimentally tested. This cell type has the potential for a cell area reduction to 6F2 and further down to 4F2 and less.
Publicationtype: Conference Paper
13
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Relevance of gate current for the functionality of deep submicron CMOS circuits
(Frontiers Media S.A., 2001)
Schwantes, Stefan
;
Krautschneider, Wolfgang
Gate current through very thin gate oxides can endanger the proper functionality of CMOS circuits. For investigation of this effect, we have implemented an improved analytical model for the gate current into a circuit simulator and determined the impact of the gate current on the functionality of basic CMOS circuits. Taking into consideration the local fluctuations of the gate oxide thickness results in a revised lower limit of the nominal gate oxide thickness.
Publicationtype: Conference Paper
15