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Item type:Publication, Access status: without files , A 41.5 dBm Broadband AlGaN/GaN HEMT Balanced Power Amplifier at K-BandThis paper describes the design and characterization of a broadband balanced power amplifier (BPA) MMIC at K-band. The utilized technology is the 0.25μm AlGaN/GaN HEMT process provided by Fraunhofer IAF. The BPA is designed as a two-stage power amplifier (PA) with a total gate width (TGW) of 4.32mm. More than 41.5dBm of output power with a power-added efficiency (PAE) greater than 21% are demonstrated between 21 and 23GHz. Furthermore, the BPA exhibits a maximum saturated output power of 17W associated with 22% of PAE at 22.5GHz. A peak PAE of 30% is realized at a drain supply voltage of 28V.Publicationtype: Conference Paper60 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Broadband High-Efficiency Power Amplifiers in 150 nm AlGaN/GaN Technology at Ka-BandThis paper reports the realization and measurements of two power amplifier MMICs at Ka-band. Both MMICs were manufactured using an industrial 0.15 μ m AlGaN/GaN HEMT technology. The power amplifiers MMIC1 and MMIC2 are three-stage designs utilizing a total gate width (TGW) of 5.12 mm and 10.24 mm, respectively. In order to maximize the efficiency, the MMICs exhibit a staging ratio of 1: 2: 6.4. The measurements demonstrate for MMIC18-10.5 W of output power with 28-32% of power-added efficiency (PAE) between 25 and 29 GHz, i.e., over a fractional bandwidth of 15%. In the same frequency band, MMIC2 exhibits more than 15 W of output power and 25% of PAE. The best performance for MMIC2 was measured at 27 GHz and reaches 20 W associated with a PAE of 27%.Publicationtype: Conference Paper91 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-BandThe paper investigates experimentally the effect of harmonic terminations on AlGaN/GaN power amplifiers (PA) performance at K-/Ka-band. Two technologies are compared, a 0.25 µm and 0.1 µm process. In both cases, a harmonic termination increases the achievable output power by about 10 % at the expense of bandwidth, whereas the efficiency is improved only in the first one.Publicationtype: Conference Paper83 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology(IEEE, 2018-03); ; ; ; Two power amplifier (PA) MMIC designs with more than 1W of output power in the 37.5-42.5 GHz Q-band downlink band are presented. The circuits are manufactured using the Fraunhofer IAF 100 nm AlGaN/GaN process. The first one is a two-stage design in microstrip line (MSL) technology, whereas the second one is a three-stage design in grounded coplanar waveguide (GCPW) technology, which enables effective output power combining and compact layout at Q-band. A maximum output power of 2.1 W (33.2 dBm) is measured at 39 GHz with a power-added efficiency (PAE) of 14.7%, corresponding to a power density of 1.45 W/mm.Publicationtype: Conference Paper260 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , A 5 W AlGaN/GaN power amplifier MMIC for 25-27 GHz downlink applications(IEEE, 2018-03); ; ; ; This work presents the design and analysis of a 5 W power amplifier (PA) MMIC operating between 25 and 27 GHz. The technology used is the 0.1 μm AlGaN/GaN HEMT process of Fraunhofer IAF. To benchmark its performance around 26 GHz two preliminary designs are synthesized and analyzed. The measured results demonstrate for the final MMIC up to 5.2 W of output power associated with 32 % of power added efficiency (PAE). A peak PAE of 35 % was observed in continuous-wave (CW) operation at a drain supply voltage of 15 V.Publicationtype: Conference Paper199 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT(2016-12-07); ; ; The next generation of satellite communication systems at Q/V-band increases the need for highly performing MMIC technology. Gallium nitride high electron mobility transistors (GaN HEMTs) can provide high power density even at millimeter wave frequencies. Targeting a band of 35-40 GHz, a power amplifier MMIC using second-harmonic input and output matching is designed, manufactured, and measured. The presented single-transistor MMIC exhibits a small-signal gain of more than 9 dB at 38 GHz and delivers 269 mW (24.3 dBm) of output power at 38 GHz, which results in a power density of over 1.2 W/mm. The amplifier shows a drain efficiency of up to 33 % and a power-added efficiency (PAE) of up to 22 %.Publicationtype: Conference Paper96 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-band(2016-08-09); ; ; ; The design, realization, and characterization of a K-band high power amplifier with a saturated output power of 40dBm is described in this paper. The amplifier is realized using a 250nm gate length AlGaN/GaN HEMT MMIC technology on semi-insulating SiC substrates. The two-stage amplifier is designed with two 6×90 μm HEMT cells in the driver and four 8×100 μm HEMT cells in the final stage and thus exhibits a relatively aggressive staging ratio of 1:3. When measured with a supply voltage of 32V, the amplifier delivers a saturated output power of 40dBm at 18 GHz. The peak PAE at this frequency is 30%, and the linear gain exceeds 20 dB. These results are state-of-the-art performance with regard to power/efficiency at K-band.Publicationtype: Conference Paper114 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Active multi-feed satcom systems with GaN SSPA at K-band(IEEE, 2016-03); ; ; ; The ongoing developments of satellite antenna technology, mainly of multiple-feed-per-beam (MFB) concepts, combined with advanced compound semiconductor and packaging technologies that provide the building blocks for a new generation of K-band satellites, are reported. This paper proposes a next-generation MFB application scenario using the advantages of both new antenna and solid-state power amplifier concepts.Publicationtype: Conference Paper100 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , A K-band multiple-feed-per-beam transmitter with GaN-power amplifiersPublicationtype: Conference Paper179 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , The Resistive-Reactive Class-J Power Amplifier Mode(2015-10); ; This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25μ gate length and a total gate periphery of 6x200μ. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior.Publicationtype: Journal Article68