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Item type:Publication, Access status: without files , A physical-based PSPICE compact model for poly(3-hexylthiophene) organic field-effect transistorsA PSPICE model for organic thin-film transistors (OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are modeled by additional voltage-controlled current sources. The model requires only five additional parameters, which can be extracted from the output characteristics of the device. The model equations have been verified by device simulations, and the simulation results have been compared with measurements of P3HT OFETs.Publicationtype: Journal Article10 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Gate insulators and interface effects in organic thin-film transistors(Elsevier, 2008-02); ; ; ; This paper presents a detailed characterization of different thermosetting polymers to be used as gate dielectrics in organic thin-film transistors. Selected materials yield smooth films with good insulation properties and offer attractive processing conditions. Bottom-gate transistors were prepared using these dielectrics and compared to hybrid transistors with surface-treated SiO2 as the dielectric. Gate bias induced leakage and solvent effects were investigated by preparing metal/insulator/semiconductor devices. Poly(3-hexylthiophene) (P3HT) transistors with organic dielectrics exhibited higher channel conductivity and lower mobility values with respect to P3HT-hybrid transistors and pentacene transistors. The importance of dielectric/semiconductor interface was discussed by comparing the performances of pentacene and P3HT transistors produced on different dielectrics.Publicationtype: Journal Article13 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors(American Institute of Physics (AIP), 2007-02-19); ; ; ; The authors report on a solution-processed composite film based on poly(vinylidene fluoride/trifluoroethylene) copolymer and barium titanate (BT) nanopowder, to be used as ferroelectric high- κ gate insulation in organic field-effect transistors (OFETs). Flexible films of up to 50 vol % BT powder content are produced by preparing homogeneous dispersion of the powder in the polymer solutions. The films exhibited high specific volume resistivities combined with dielectric constants of up to 51.5 at 1 kHz. Low-voltage OFETs with ferroelectric hysteresis and good memory retention properties were demonstrated by using the composite films. © 2007 American Institute of Physics.Publicationtype: Journal Article7 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Bottom gate organic field effect transistors made by laser structuring(Elsevier, 2006-12); ; This paper presents a process to manufacture all-polymer field effect transistors in a bottom gate configuration where all electrodes - including the gate electrode - are patterned using an excimer laser in combination with a scanning unit. This technique yields channel lengths of 10 μm between the source and the drain electrodes. Being a combination of a scanning and a single shot patterning process it is a promising candidate for an industrial process with a resolution of 10 μm and an operational throughput of at least 6 cm2/s.Publicationtype: Journal Article7 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Wavelength-selective organic field-effect phototransistors based on dye-doped poly-3-hexylthiophene(American Institute of Physics (AIP), 2006-09-08); ; ; ; The authors present a strategy to manufacture wavelength-selective field-effect phototransistors by employing dye-doped poly-3-hexylthiophene (P3HT) as a semiconducting layer. The dye doping of the semiconductor P3HT was achieved by blending organic molecules - coumarin 6, oxazine 1, and nile red - into the conjugated organic polymer. Illuminating these transistors with monochromatic light in the range of 400-700 nm resulted in varying conductivities for certain wavelengths in dependence on the particular dye. This effect is attributed to the photogeneration of excitons on the dye molecules, which are subsequently transferred to the conjugated polymer. © 2006 American Institute of Physics.Publicationtype: Journal Article3 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Polymer gate dielectrics for high performance organic field-effect transistors(Materials Research Society, 2006-04); ; ; ; Solution-processed bottom-gate organic field-effect transistors (OFETs) with different polymeric dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. Dielectric materials of high chemical stability with simple processing conditions were used as gate-insulation in OFETs. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs. © 2006 Materials Research Society.Publicationtype: Conference Paper10 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Access status: without files , Low-temperature process for manufacturing all polymer thin-film transistors(IEEE, 2005-12-01); ; ; ; We report a low-temperature process to manufacture an all polymer thin-film transistor avoiding curing and annealing temperatures higher than 80°C. This aspect of energy efficiency directly supports the low-cost feature of organic devices in fabrication. The process is being demonstrated by using commercially available polymers such as poly(ethylenedioxythiophene)/ polystyrenesulfonate dispersion representing the source, drain and gate electrode, Norland optical adhesive NOA 75 as the gatedielectric and regioregular poly(3-hexylthiophene-2,5-diyl) as the semiconducting polymer - all on a polyvinyl chloride substrate. Functional devices with a channel length of 25 urn and a channel width of 1 mm to 5 mm have been realized.Publicationtype: Conference Paper19